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Toshiba DTMOSIV Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 TK7P65W,RQ(S

RS-artikelnummer:: 133-2801
Tillv. art.nr:: TK7P65W,RQ(S
Tillverkare / varumärke:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 TK7P65W,RQ(S

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RS-artikelnummer:: 133-2801
Tillv. art.nr:: TK7P65W,RQ(S
Tillverkare / varumärke:: Toshiba

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Välj alla	Attribut	Värde
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.8A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Series	DTMOSIV
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.7V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	60W
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Operating Temperature	150°C
	Width	6.1 mm
	Length	6.6mm
	Standards/Approvals	No
	Height	2.3mm
	Automotive Standard	No

	Välj alla
	Brand Toshiba
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.8A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Series DTMOSIV
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.7V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 60W
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Operating Temperature 150°C
	Width 6.1 mm
	Length 6.6mm
	Standards/Approvals No
	Height 2.3mm
	Automotive Standard No

COO (Country of Origin):: JP

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