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Toshiba DTMOSIV Type N-Channel MOSFET, 5.8 A, 650 V Enhancement, 3-Pin TO-252 TK6P65W,RQ(S

RS-artikelnummer:: 133-2800
Tillv. art.nr:: TK6P65W,RQ(S
Tillverkare / varumärke:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 5.8 A, 650 V Enhancement, 3-Pin TO-252 TK6P65W,RQ(S

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RS-artikelnummer:: 133-2800
Tillv. art.nr:: TK6P65W,RQ(S
Tillverkare / varumärke:: Toshiba

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Välj alla	Attribut	Värde
	Brand	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.8A
	Maximum Drain Source Voltage Vds	650V
	Series	DTMOSIV
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.05Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	60W
	Forward Voltage Vf	1.7V
	Maximum Operating Temperature	150°C
	Height	2.3mm
	Length	6.6mm
	Width	6.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.8A
	Maximum Drain Source Voltage Vds 650V
	Series DTMOSIV
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.05Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 60W
	Forward Voltage Vf 1.7V
	Maximum Operating Temperature 150°C
	Height 2.3mm
	Length 6.6mm
	Width 6.1 mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: JP

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