Toshiba DTMOSIV Type N-Channel MOSFET, 5.8 A, 650 V Enhancement, 3-Pin TO-252 TK6P65W,RQ(S
- RS-artikelnummer:
- 133-2800
- Tillv. art.nr:
- TK6P65W,RQ(S
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
106,18 kr
(exkl. moms)
132,72 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 10,618 kr | 106,18 kr |
| 50 - 90 | 9,52 kr | 95,20 kr |
| 100 - 490 | 9,251 kr | 92,51 kr |
| 500 - 990 | 8,859 kr | 88,59 kr |
| 1000 + | 8,624 kr | 86,24 kr |
*vägledande pris
- RS-artikelnummer:
- 133-2800
- Tillv. art.nr:
- TK6P65W,RQ(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | DTMOSIV | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.05Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series DTMOSIV | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.05Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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