IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T
- RS-artikelnummer:
- 125-8041
- Distrelec artikelnummer:
- 302-53-370
- Tillv. art.nr:
- IXFN360N10T
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
344,58 kr
(exkl. moms)
430,72 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 24 enhet(er) från den 29 december 2025
- Dessutom levereras 5 enhet(er) från den 29 december 2025
- Dessutom levereras 1 245 enhet(er) från den 05 januari 2026
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Enheter | Per enhet |
|---|---|
| 1 - 1 | 344,58 kr |
| 2 - 4 | 310,58 kr |
| 5 - 9 | 296,24 kr |
| 10 - 19 | 286,05 kr |
| 20 + | 280,45 kr |
*vägledande pris
- RS-artikelnummer:
- 125-8041
- Distrelec artikelnummer:
- 302-53-370
- Tillv. art.nr:
- IXFN360N10T
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-227 | |
| Series | GigaMOS Trench HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 525nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 830W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 25.07 mm | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253370 | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-227 | ||
Series GigaMOS Trench HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 525nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 830W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 25.07 mm | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Length 38.23mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253370 | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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