ROHM RD3G08DBKHRB Type N-Channel Single MOSFETs, 40 V Enhancement, 3-Pin TO-252 (TL) RD3G08DBKHRBTL

RS-artikelnummer:: 687-464
Tillv. art.nr:: RD3G08DBKHRBTL
Tillverkare / varumärke:: ROHM

ROHM RD3G08DBKHRB Type N-Channel Single MOSFETs, 40 V Enhancement, 3-Pin TO-252 (TL) RD3G08DBKHRBTL

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Antal (1 längd med 2 enheter)*

21,35 kr

(exkl. moms)

26,688 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 19 januari 2026

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Enheter	Per enhet	Per Längd*
2 - 18	10,675 kr	21,35 kr
20 - 48	9,43 kr	18,86 kr
50 - 198	8,45 kr	16,90 kr
200 - 998	6,81 kr	13,62 kr
1000 +	6,68 kr	13,36 kr

*vägledande pris

RS-artikelnummer:: 687-464
Tillv. art.nr:: RD3G08DBKHRBTL
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	40V
	Series	RD3G08DBKHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	76W
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	175°C
	Length	10.50mm
	Height	2.3mm
	Width	6.8 mm
	Standards/Approvals	AEC-Q101, RoHS
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 40V
	Series RD3G08DBKHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 76W
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 175°C
	Length 10.50mm
	Height 2.3mm
	Width 6.8 mm
	Standards/Approvals AEC-Q101, RoHS
	Automotive Standard AEC-Q101

Datasheet - RD3G08DBKHRBTL

COO (Country of Origin):: JP

The ROHM Power MOSFET is engineered for high-performance applications demanding superior efficiency and high current capacity. Designed to operate at 40V with a maximum continuous drain current of 80A, this MOSFET delivers exceptional reliability and performance under various operating conditions. Furthermore, its low on-resistance of 4.1mΩ minimises energy losses, ensuring optimal thermal performance and power dissipation up to 76W, making it an ideal choice for demanding applications in automotive and industrial sectors.

Low on resistance for reduced energy losses during operation

High continuous drain current capability of 80A for robust performance

Power dissipation rating of 76W for reliable operation in high-power applications

Avalanche current rating of 30A, ensuring durability during transient conditions

AEC Q101 qualification for reliability in automotive applications

RoHS compliant with Pb free plating, aligning with environmental standards

Includes packaging specifications like embossed tape for efficient handling

Multiple voltage ratings to cater to diverse circuit designs

ROHM RD3G08DBKHRB Type N-Channel Single MOSFETs, 40 V Enhancement, 3-Pin TO-252 (TL) RD3G08DBKHRBTL

GRATIS leverans för online beställningar över 500,00 kr

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