ROHM RD3L08CBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08CBLHRBTL

RS-artikelnummer:: 687-440
Tillv. art.nr:: RD3L08CBLHRBTL
Tillverkare / varumärke:: ROHM

ROHM RD3L08CBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08CBLHRBTL

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Antal (1 längd med 2 enheter)*

26,86 kr

(exkl. moms)

33,58 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 19 januari 2026

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Enheter	Per enhet	Per Längd*
2 - 18	13,43 kr	26,86 kr
20 - 48	11,855 kr	23,71 kr
50 - 198	10,61 kr	21,22 kr
200 - 998	8,58 kr	17,16 kr
1000 +	8,385 kr	16,77 kr

*vägledande pris

RS-artikelnummer:: 687-440
Tillv. art.nr:: RD3L08CBLHRBTL
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252 (TL)
	Series	RD3L08CBLHRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Power Dissipation Pd	96W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	6.8 mm
	Height	2.3mm
	Length	10.50mm
	Standards/Approvals	RoHS, AEC-Q101
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252 (TL)
	Series RD3L08CBLHRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Power Dissipation Pd 96W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 6.8 mm
	Height 2.3mm
	Length 10.50mm
	Standards/Approvals RoHS, AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - RD3L08CBLHRBTL

The ROHM N channel power MOSFET designed for demanding applications, offering excellent efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 80A, this device is ideal for switching and amplification tasks in automotive and consumer electronics. Its low on-resistance of just 5.3mΩ maximises power efficiency, while its robust construction ensures it withstands harsh operational environments, meeting AEC-Q101 qualifications and providing 100% avalanche testing for enhanced safety. This MOSFET represents a powerful solution for advanced circuitry, blending performance with stringent compliance standards.

Low on resistance of 5.3mΩ significantly improves energy efficiency

Supports up to 80A continuous drain current for robust performance in demanding applications

100% avalanche tested to ensure stability and reliability during operation

AEC Q101 qualified, making it suitable for automotive applications

Wide operating junction temperature range from -55°C to +175°C ensures reliable performance in various conditions

Integrated thermal resistance of junction-case optimises power handling capabilities

Pb free and RoHS compliant, aligning with modern environmental standards.

ROHM RD3L08CBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08CBLHRBTL

GRATIS leverans för online beställningar över 500,00 kr

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