ROHM AG185FGD3HRB Type N-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG185FGD3HRBTL
- RS-artikelnummer:
- 687-438
- Tillv. art.nr:
- AG185FGD3HRBTL
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 2 enheter)*
27,12 kr
(exkl. moms)
33,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 19 januari 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 2 - 18 | 13,56 kr | 27,12 kr |
| 20 - 48 | 11,92 kr | 23,84 kr |
| 50 - 198 | 10,74 kr | 21,48 kr |
| 200 - 998 | 8,645 kr | 17,29 kr |
| 1000 + | 8,45 kr | 16,90 kr |
*vägledande pris
- RS-artikelnummer:
- 687-438
- Tillv. art.nr:
- AG185FGD3HRBTL
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | AG185FGD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.80 mm | |
| Length | 10.50mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds -40V | ||
Series AG185FGD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.80 mm | ||
Length 10.50mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed for automotive applications. This device is tailored to provide efficient switching with a maximum drain-source voltage of 40V and a continuous drain current of 80A. It features a low on-resistance, ensuring minimal power loss during operation, which contributes to improved thermal management and performance in demanding environments. With a power dissipation capability of 96W, this MOSFET is suitable for various applications that require reliable and robust performance. Its Pb-free plating and RoHS compliance highlight 's commitment to environmentally friendly manufacturing. This part is AEC-Q101 qualified, ensuring it meets the stringent automotive standards for reliability and safety.
Low on resistance of 3.2mΩ maximises efficiency and reduces heat generation
Rated for a continuous drain current of 80A, suitable for robust applications
Provides a high power dissipation capability of 96W for demanding tasks
Designed for a maximum drain-source voltage of 40V ensuring versatility in applications
AEC Q101 qualified, ensuring high reliability in automotive use
Pb free plating and RoHS compliance reflect environmentally conscious production
Suitable for various automotive systems, enhancing system performance and longevity
Features a compact DPAK package for efficient space utilisation on PCB designs
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