ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL

RS-artikelnummer:: 687-465
Tillv. art.nr:: RD3L08DBKHRBTL
Tillverkare / varumärke:: ROHM

ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL

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Antal (1 längd med 2 enheter)*

21,35 kr

(exkl. moms)

26,688 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 19 januari 2026

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Enheter	Per enhet	Per Längd*
2 - 18	10,675 kr	21,35 kr
20 - 48	9,43 kr	18,86 kr
50 - 198	8,45 kr	16,90 kr
200 - 998	6,81 kr	13,62 kr
1000 +	6,68 kr	13,36 kr

*vägledande pris

RS-artikelnummer:: 687-465
Tillv. art.nr:: RD3L08DBKHRBTL
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	60V
	Series	RD3L08DBKHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	76W
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	175°C
	Length	10.50mm
	Height	2.3mm
	Width	6.8 mm
	Standards/Approvals	AEC-Q101, RoHS
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 60V
	Series RD3L08DBKHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 76W
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 175°C
	Length 10.50mm
	Height 2.3mm
	Width 6.8 mm
	Standards/Approvals AEC-Q101, RoHS
	Automotive Standard AEC-Q101

Datasheet - RD3L08DBKHRBTL

COO (Country of Origin):: JP

The ROHM Power MOSFET is engineered for high-performance in demanding applications, offering reliable switching capabilities with low on-resistance and a robust breakdown voltage. Designed to handle up to 80A of continuous drain current and with a maximum drain-source voltage of 60V, this component ensures efficiency and durability. It is ideal for automotive electronics, lighting, and other power management systems, featuring Pb-free plating and is AEC-Q101 qualified, making it compliant with the latest industry standards. This MOSFET provides a combination of exceptional thermal performance and reliability, making it a suitable choice for engineers seeking to optimise their circuit designs.

Low on resistance of 7.5mΩ maximises power efficiency

AEC Q101 qualification ensures high reliability in automotive applications

Passes 100% avalanche testing for enhanced durability

Capable of handling continuous drain current up to 80A

Maximum drain-source voltage rating of 60V provides substantial overhead

Pb free plating adheres to RoHS compliance, promoting environmental responsibility

Versatile packaging ensures compatibility across various application designs

Ideal for use in ADAS, info systems, and body control applications

Features low gate charge characteristics for faster switching times

ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL

GRATIS leverans för online beställningar över 500,00 kr

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