ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI RY7P250BMTBC
- RS-artikelnummer:
- 687-343
- Tillv. art.nr:
- RY7P250BMTBC
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 2 enheter)*
124,45 kr
(exkl. moms)
155,562 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 19 januari 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 2 - 18 | 62,225 kr | 124,45 kr |
| 20 - 98 | 54,76 kr | 109,52 kr |
| 100 - 198 | 49,19 kr | 98,38 kr |
| 200 + | 38,645 kr | 77,29 kr |
*vägledande pris
- RS-artikelnummer:
- 687-343
- Tillv. art.nr:
- RY7P250BMTBC
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN8080T8LSHAAI | |
| Series | RY7P250BM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.86mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 340W | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Width | 1.70 mm | |
| Length | 1.7mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN8080T8LSHAAI | ||
Series RY7P250BM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.86mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 340W | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Width 1.70 mm | ||
Length 1.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.
Low on resistance for enhanced efficiency
Wide-SOA characteristics for superior reliability
Designed to handle continuous drain currents up to 250A
High pulsed drain current capability at ±900A
Excellent thermal management with thermal resistance of 0.44°C/W
Suitable for a wide operating temperature range of -55 to +175°C
Complies with RoHS and halogen-free standards.
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