ROHM RD3 Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 RD3P04BBKHRBTL
- RS-artikelnummer:
- 646-544
- Tillv. art.nr:
- RD3P04BBKHRBTL
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
85,57 kr
(exkl. moms)
106,96 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 90 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 8,557 kr | 85,57 kr |
| 100 - 490 | 7,526 kr | 75,26 kr |
| 500 - 990 | 6,765 kr | 67,65 kr |
| 1000 + | 5,354 kr | 53,54 kr |
*vägledande pris
- RS-artikelnummer:
- 646-544
- Tillv. art.nr:
- RD3P04BBKHRBTL
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Power Dissipation Pd | 53W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Power Dissipation Pd 53W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 100 volt 36 ampere power metal oxide semiconductor field effect transistor features lead free plating and is restriction of hazardous substances compliant. It is one hundred percent avalanche tested.
Low on-resistance
AEC-Q101 qualified
relaterade länkar
- ROHM RD3 Type N-Channel Single MOSFETs 3-Pin TO-252 RD3L04BBLHRBTL
- ROHM RD3 Type P-Channel Single MOSFETs 3-Pin TO-252 RD3L03BBJHRBTL
- ROHM RD3 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08CBKHRBTL
- ROHM RD3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 RD3L04BBKHRBTL
- ROHM RD3 Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08BBJHRBTL
- ROHM AG084F Type N-Channel Single MOSFETs 40 V Enhancement, 3-Pin TO-252
- ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L08DBKHRBTL
- ROHM AG194FPD3HRB Type N-Channel Single MOSFETs 3-Pin TO-252 (TL) AG194FPD3HRBTL
