ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

RS-artikelnummer:: 687-380
Tillv. art.nr:: RQ3P120BKFRATCB
Tillverkare / varumärke:: ROHM

ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

Mängdrabatt möjlig

Antal (1 längd med 2 enheter)*

39,76 kr

(exkl. moms)

49,70 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 19 januari 2026

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Enheter	Per enhet	Per Längd*
2 - 18	19,88 kr	39,76 kr
20 - 48	17,47 kr	34,94 kr
50 - 198	15,79 kr	31,58 kr
200 - 998	12,655 kr	25,31 kr
1000 +	12,43 kr	24,86 kr

*vägledande pris

RS-artikelnummer:: 687-380
Tillv. art.nr:: RQ3P120BKFRATCB
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	100V
	Series	RQ3P120BKFRA
	Package Type	HSMT-8AG
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	58mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.9nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	40W
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Width	300 mm
	Height	0.9mm
	Standards/Approvals	RoHS
	Length	3.30mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 100V
	Series RQ3P120BKFRA
	Package Type HSMT-8AG
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 58mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.9nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 40W
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Width 300 mm
	Height 0.9mm
	Standards/Approvals RoHS
	Length 3.30mm
	Automotive Standard AEC-Q101

Datasheet - RQ3P120BKFRATCB

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.

Small high-powered package optimises space on PCBs by 64%

High mounting reliability achieved through innovative terminal and plating treatments

AEC Q101 qualification ensures reliability in automotive applications

Designed to handle a maximum power dissipation of 40W for effective thermal management

Low on-state resistance of 58mΩ enhances efficiency and performance

Robust gate-source voltage tolerance of ±20V expands integration possibilities

Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation

Highly reliable operation across a temperature range of -55 to +150°C

ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

GRATIS leverans för online beställningar över 500,00 kr

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