ROHM RF9P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR

RS-artikelnummer:: 687-387
Tillv. art.nr:: RF9P120BKFRATCR
Tillverkare / varumärke:: ROHM

ROHM RF9P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR

Mängdrabatt möjlig

Antal (1 längd med 2 enheter)*

32,26 kr

(exkl. moms)

40,32 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 19 januari 2026

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Enheter	Per enhet	Per Längd*
2 - 18	16,13 kr	32,26 kr
20 - 48	14,17 kr	28,34 kr
50 - 198	12,77 kr	25,54 kr
200 - 998	10,19 kr	20,38 kr
1000 +	10,08 kr	20,16 kr

*vägledande pris

RS-artikelnummer:: 687-387
Tillv. art.nr:: RF9P120BKFRATCR
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	100V
	Package Type	DFN2020Y7LSAA
	Series	RF9P120BKFRA
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	58mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	23W
	Typical Gate Charge Qg @ Vgs	6.9nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Height	0.65mm
	Width	2.1 mm
	Length	2.1mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 100V
	Package Type DFN2020Y7LSAA
	Series RF9P120BKFRA
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 58mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 23W
	Typical Gate Charge Qg @ Vgs 6.9nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Height 0.65mm
	Width 2.1 mm
	Length 2.1mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - RF9P120BKFRATCR

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed for efficient switching in various applications including automotive, lighting, and body electronics. Engineered to support a robust continuous drain current of ±12A and a maximum Drain-Source voltage of 100V, this component excels in environments demanding reliability and efficiency. Its advanced design features low on-resistance and high power density, ensuring optimal performance while complying with AEC-Q101 standards and RoHS regulations. The compact DFN2020Y7LSAA package further allows easy integration into space-constrained designs, making it a versatile choice for modern electronic solutions.

AEC Q101 qualified for automotive applications, ensuring reliability

Low on resistance (RDS(on)), enhancing efficiency during operation

Supports a Drain-Source voltage of 100V suitable for high-voltage applications

Continuous drain current of ±12A, capable of handling demanding loads

Disposes of Pb free plating, ensuring compliance with environmental standards

Halogen free, contributing to eco-friendly product design

High power density with a maximum power dissipation of 23W, optimising thermal performance

ROHM RF9P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR

GRATIS leverans för online beställningar över 500,00 kr

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