ROHM R4P Type N-Channel Single MOSFETs, 30 V Enhancement, 3-Pin MPT3 R4P030N03HZGT100
- RS-artikelnummer:
- 646-552
- Tillv. art.nr:
- R4P030N03HZGT100
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
39,09 kr
(exkl. moms)
48,86 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 02 februari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 3,909 kr | 39,09 kr |
| 100 - 240 | 3,427 kr | 34,27 kr |
| 250 - 990 | 3,091 kr | 30,91 kr |
| 1000 - 4990 | 2,498 kr | 24,98 kr |
| 5000 + | 2,43 kr | 24,30 kr |
*vägledande pris
- RS-artikelnummer:
- 646-552
- Tillv. art.nr:
- R4P030N03HZGT100
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | R4P | |
| Package Type | MPT3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.70 mm | |
| Height | 1.6mm | |
| Length | 4.30mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 30V | ||
Series R4P | ||
Package Type MPT3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.70 mm | ||
Height 1.6mm | ||
Length 4.30mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM 4 volt drive N channel metal oxide semiconductor field effect transistor features low on resistance and supports 4 volt drive operation.
AEC-Q101 Qualified
relaterade länkar
- ROHM R4P Type N-Channel Single MOSFETs 3-Pin MPT3 R4P020N06HZGT100
- ROHM R2P Type N-Channel Single MOSFETs 3-Pin MPT3 R2P020N06HZGT100
- ROHM AW2K21 Type N-Channel Single MOSFETs 22-Pin WLCSP-2020 AW2K21AR
- ROHM AG084F Type N-Channel Single MOSFETs 40 V Enhancement, 3-Pin TO-252
- ROHM RY7P250BM Type N-Channel Single MOSFETs 8-Pin DFN8080T8LSHAAI RY7P250BMTBC
- ROHM RH7G04CBKFRA Type N-Channel Single MOSFETs 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB
- ROHM RF9P120BKFRA Type N-Channel Single MOSFETs 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR
- ROHM RS7E200 Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin DFN5060-8S RS7E200BGTB1
