Vishay SiR870BDP Type N-Channel Single MOSFETs, 81 A, 100 V Enhancement, 8-Pin PowerPAK SIR870BDP-T1-UE3

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40 464,00 kr

(exkl. moms)

50 580,00 kr

(inkl. moms)

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RS-artikelnummer:
653-199
Tillv. art.nr:
SIR870BDP-T1-UE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Series

SiR870BDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0061Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.15mm

Height

0.61mm

Width

5.15 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.

Pb Free

Halogen free

RoHS compliant

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