Vishay SISS5812DN Type N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK
- RS-artikelnummer:
- 653-133
- Tillv. art.nr:
- SISS5812DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
6,83 kr
(exkl. moms)
8,54 kr
(inkl. moms)
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- Dessutom levereras 6 000 enhet(er) från den 29 december 2025
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Längd(er) | Per Längd |
|---|---|
| 1 - 24 | 6,83 kr |
| 25 - 99 | 6,61 kr |
| 100 - 499 | 6,50 kr |
| 500 - 999 | 5,49 kr |
| 1000 + | 5,15 kr |
*vägledande pris
- RS-artikelnummer:
- 653-133
- Tillv. art.nr:
- SISS5812DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 42.8A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | SISS5812DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0135Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 44.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.40mm | |
| Height | 0.83mm | |
| Width | 3.40 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 42.8A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series SISS5812DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0135Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 44.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.40mm | ||
Height 0.83mm | ||
Width 3.40 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a Compact PowerPAK 1212-8S, it's Ideal for AI server power solutions, DC/DC converters, and load switching.
Pb Free
Halogen free
RoHS compliant
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