Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays, 20 A, 60 V Enhancement, 8-Pin TDSON

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18 545,00 kr

(exkl. moms)

23 180,00 kr

(inkl. moms)

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RS-artikelnummer:
223-8521
Tillv. art.nr:
IPG20N06S4L26AATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET Arrays

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Package Type

TDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

33W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Length

5.15mm

Height

1mm

Width

5.9 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.

Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package

•Ultra low Rds

•100% Avalanche tested

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