Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 118 A, 1200 V N, 4-Pin Tape & Reel DM170S12TDRB

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 enhet)*

227,84 kr

(exkl. moms)

284,80 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 27 enhet(er) från den 19 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 - 9227,84 kr
10 - 99204,96 kr
100 +189,06 kr

*vägledande pris

RS-artikelnummer:
427-760
Tillv. art.nr:
DM170S12TDRB
Tillverkare / varumärke:
Starpower
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Starpower

Product Type

SiC Mosfet without Diode

Channel Type

Single Switch

Maximum Continuous Drain Current Id

118A

Maximum Drain Source Voltage Vds

1200V

Package Type

Tape & Reel

Series

DOSEMI

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

29.0mΩ

Channel Mode

N

Maximum Power Dissipation Pd

355W

Forward Voltage Vf

3.6V

Maximum Gate Source Voltage Vgs

19 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.

SiC power MOSFET

Low RDS(on)

Chip sintering technology

Low inductance case avoid oscillations

ROHS

relaterade länkar