Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 64 A, 1200 V N, 4-Pin Tape & Reel DM400S12TDRB

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126,78 kr

(exkl. moms)

158,48 kr

(inkl. moms)

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  • Dessutom levereras 30 enhet(er) från den 19 januari 2026
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RS-artikelnummer:
427-757
Tillv. art.nr:
DM400S12TDRB
Tillverkare / varumärke:
Starpower
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Brand

Starpower

Product Type

SiC Mosfet without Diode

Channel Type

Single Switch

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

1200V

Series

DOSEMI

Package Type

Tape & Reel

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

55.2mΩ

Channel Mode

N

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

268W

Forward Voltage Vf

3.85V

Typical Gate Charge Qg @ Vgs

86.6nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.

SiC power MOSFET

Low RDS(on)

Low inductance case avoid oscillations

ROHS

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