ROHM BSM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

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RS-artikelnummer:
144-2254
Tillv. art.nr:
BSM180D12P3C007
Tillverkare / varumärke:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

C

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

880 W

Number of Elements per Chip

2

Width

45.6mm

Transistor Material

SiC

Length

122mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor


Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

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