onsemi SiC Power Module, 1200 V F1-2PACK
- RS-artikelnummer:
- 248-5823
- Tillv. art.nr:
- NXH010P120MNF1PTG
- Tillverkare / varumärke:
- onsemi
Antal (1 fack med 28 enheter)*
39 719,148 kr
(exkl. moms)
49 648,928 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 28 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Bricka* |
|---|---|---|
| 28 + | 1 418,541 kr | 39 719,15 kr |
*vägledande pris
- RS-artikelnummer:
- 248-5823
- Tillv. art.nr:
- NXH010P120MNF1PTG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | SiC Power Module | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | F1-2PACK | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type SiC Power Module | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type F1-2PACK | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material
The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.
10 mohm/1200 V SiC MOSFET half bridge
Options with pre−applied thermal interface material and without pre−applied TIM
Press−fit pins
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