Infineon OptiMOS Type N-Channel MOSFET, 137 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1
- RS-artikelnummer:
- 349-427
- Tillv. art.nr:
- IPD023N03LF2SATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
119,63 kr
(exkl. moms)
149,54 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 11,963 kr | 119,63 kr |
| 100 - 240 | 11,368 kr | 113,68 kr |
| 250 - 490 | 10,517 kr | 105,17 kr |
| 500 - 990 | 9,688 kr | 96,88 kr |
| 1000 + | 9,33 kr | 93,30 kr |
*vägledande pris
- RS-artikelnummer:
- 349-427
- Tillv. art.nr:
- IPD023N03LF2SATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 2.3 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
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