Infineon CoolSiC Type N-Channel MOSFET, 57 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R040M2HXTMA1
- RS-artikelnummer:
- 349-050
- Tillv. art.nr:
- IMLT65R040M2HXTMA1
- Tillverkare / varumärke:
- Infineon
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Antal (1 enhet)*
117,09 kr
(exkl. moms)
146,36 kr
(inkl. moms)
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- Leverans från den 16 november 2027
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 117,09 kr |
| 10 - 99 | 105,28 kr |
| 100 - 499 | 97,10 kr |
| 500 - 999 | 90,05 kr |
| 1000 + | 80,86 kr |
*vägledande pris
- RS-artikelnummer:
- 349-050
- Tillv. art.nr:
- IMLT65R040M2HXTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 268W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 268W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, providing unparalleled performance, superior reliability, and excellent ease of use. Designed to meet the demands of modern power systems, this MOSFET enables cost effective, highly efficient, and simplified designs. It is the ideal solution for addressing the ever-growing needs of power systems and markets, offering both high performance and energy efficiency for a wide range of applications.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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