Infineon OptiMOS Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1
- RS-artikelnummer:
- 348-988
- Tillv. art.nr:
- IPD60R180CM8XTMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
92,98 kr
(exkl. moms)
116,225 kr
(inkl. moms)
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- Dessutom levereras 2 500 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 18,596 kr | 92,98 kr |
| 50 - 95 | 17,674 kr | 88,37 kr |
| 100 - 495 | 16,352 kr | 81,76 kr |
| 500 - 995 | 15,076 kr | 75,38 kr |
| 1000 + | 14,516 kr | 72,58 kr |
*vägledande pris
- RS-artikelnummer:
- 348-988
- Tillv. art.nr:
- IPD60R180CM8XTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 127W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 127W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
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