Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

RS-artikelnummer:: 284-771
Tillv. art.nr:: IQE050N08NM5CGSCATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

135,20 kr

(exkl. moms)

169,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per förpackning*
5 - 45	27,04 kr	135,20 kr
50 - 95	25,692 kr	128,46 kr
100 - 495	23,812 kr	119,06 kr
500 - 995	21,884 kr	109,42 kr
1000 +	21,078 kr	105,39 kr

*vägledande pris

RS-artikelnummer:: 284-771
Tillv. art.nr:: IQE050N08NM5CGSCATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS
	Package Type	PG-WHTFN-9
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	5.0mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	100W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS
	Package Type PG-WHTFN-9
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 5.0mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 100W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IQE050N08NM5CGSCATMA1

The Infineon MOSFET features an power transistor is an exemplary choice for applications requiring high efficiency and reliability. Optimised for synchronous rectification, this N channel device is part of the OptiMOS 5 series, renowned for its robust thermal performance and low on resistance. The device operates effectively at voltages of up to 80V, making it suitable for a wide range of industrial applications. With features such as 100% avalanche testing and a Pb free design compliant with RoHS standards, this product embodies both safety and sustainability in its manufacturing process. Its small footprint and high performance manifest in the Advanced design that ensures superior thermal characteristics, presenting an excellent option for designers aiming to improve overall system efficiency.

Optimised for synchronous rectification

N channel for easy circuit integration

Low on resistance reduces power losses

Robust thermal resistance for reliability

Avalanche tested for extreme conditions

Pb free lead plating for safety

Halogen free construction meets IEC standards

Qualified per JEDEC industry standards

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

GRATIS leverans för online beställningar över 500,00 kr

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