Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1

RS-artikelnummer:: 284-752
Tillv. art.nr:: IQE022N06LM5CGSCATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

128,86 kr

(exkl. moms)

161,075 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per förpackning*
5 - 45	25,772 kr	128,86 kr
50 - 95	24,484 kr	122,42 kr
100 - 495	22,668 kr	113,34 kr
500 - 995	20,876 kr	104,38 kr
1000 +	20,092 kr	100,46 kr

*vägledande pris

RS-artikelnummer:: 284-752
Tillv. art.nr:: IQE022N06LM5CGSCATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PG-TSON-8
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	100W
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC61249-2-21, JEDEC
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Package Type PG-TSON-8
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 100W
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC61249-2-21, JEDEC
	Automotive Standard No

Datasheet - IQE022N06LM5CGSCATMA1

The Infineon MOSFET is a power transistor is engineered for high performance in switch mode power supplies, ensuring reliability across demanding applications. Designed within the OptiMOS 5 series, it delivers exceptional efficiency and low on resistance, making it an Ideal choice for synchronous rectification. With its Pb free and RoHS compliant construction, the product not only meets the latest environmental standards but also assures robust performance under varying conditions. This transistor features Advanced thermal management and is avalanche rated, ensuring safer operation and durability in critical settings. Its logic level drive capability allows for seamless integration into a wide range of electronic systems, further exemplifying its versatility and performance stability.

Optimised for high efficiency power conversion

Low on resistance for enhanced performance

Pb free design for environmental compliance

Avalanche tested for increased reliability

Logic level drive simplifies low voltage interfacing

Thermal resistance for efficient heat management

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1

GRATIS leverans för online beställningar över 500,00 kr

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