Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

RS-artikelnummer:: 284-723
Tillv. art.nr:: IMT65R048M1HXUMA1
Tillverkare / varumärke:: Infineon

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

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139,82 kr

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174,78 kr

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RS-artikelnummer:: 284-723
Tillv. art.nr:: IMT65R048M1HXUMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolSiC MOSFET 650 V G1
	Package Type	PG-HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	64mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Power Dissipation Pd	227W
	Typical Gate Charge Qg @ Vgs	33nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 650V
	Series CoolSiC MOSFET 650 V G1
	Package Type PG-HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 64mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Power Dissipation Pd 227W
	Typical Gate Charge Qg @ Vgs 33nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMT65R048M1HXUMA1

The Infineon CoolSiC MOSFET 650V G1 epitomises innovation in semiconductor technology. This high performance device leverages robust silicon carbide technology, optimising efficiency and reliability for applications requiring superior thermal performance and stability. Designed specifically for demanding environments, it excels in high temperature operations while simplifying system designs. With its Advanced features, the MOSFET ensures that users can achieve excellent power density and conserve space, making it an Ideal choice for a range of applications including electric vehicle charging infrastructure, solar inverters, and efficient power supplies. The CoolSiC MOSFET 650V G1 is more than just a component; it embodies a commitment to performance and reliability, perfect for modern electronic solutions.

Optimised for high frequency applications

Robust thermal performance for harsh environments

Enhanced reliability for extended life

Low switching losses improve efficiency

Compact design reduces system footprint

Industry leading avalanche capability for fault tolerance

User friendly integration with standard drivers

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

GRATIS leverans för online beställningar över 500,00 kr

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