Infineon CoolSiC Type N-Channel MOSFET, 26 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1
- RS-artikelnummer:
- 349-054
- Tillv. art.nr:
- IMT65R107M1HXUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
148,01 kr
(exkl. moms)
185,012 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 000 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 74,005 kr | 148,01 kr |
| 20 - 198 | 66,585 kr | 133,17 kr |
| 200 + | 61,49 kr | 122,98 kr |
*vägledande pris
- RS-artikelnummer:
- 349-054
- Tillv. art.nr:
- IMT65R107M1HXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 141mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 138W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 141mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 138W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G1 is built on over 20 years of solid silicon carbide technology developed by Infineon. By leveraging the unique characteristics of wide bandgap SiC materials, the 650 V CoolSiC MOSFET delivers an exceptional combination of performance, reliability, and ease of use. It is designed for high temperature and harsh operating conditions, making it ideal for demanding applications. This MOSFET enables the simplified and cost-effective deployment of systems with the highest efficiency, addressing the increasing needs of modern power electronics.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides up to 4 times lower switching losses
relaterade länkar
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
- Infineon IGT65 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1