Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 142 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1

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RS-artikelnummer:
284-715
Tillv. art.nr:
IMT65R030M1HXUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

142A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

42mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

294W

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon CoolSiC MOSFET 650 V G1 is engineered for the modern demands of high performance applications, offering a robust solution in a Compact package. Designed with cutting edge solid silicon carbide technology, this semiconductor device combines exceptional reliability and efficiency, making it Ideal for a broad range of applications such as solar inverters, electric vehicle charging infrastructure, and uninterruptible power supplies. With a focus on simplicity and cost effectiveness, it enhances system performance while ensuring superior thermal stability for challenging environments. This device guarantees not just performance but also a seamless integration into various designs, redefining what’s possible in power management.

Optimised switching enhances operational efficiency

Robust body diode supports Advanced applications

Exceptional thermal performance in extreme conditions

Kelvin source reduces switching losses

High avalanche capability for system durability

Compatible with standard drivers for easy integration

Compact design increases power density

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