Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

RS-artikelnummer:: 284-726
Tillv. art.nr:: IMT65R057M1HXUMA1
Tillverkare / varumärke:: Infineon

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

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131,74 kr

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164,68 kr

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1 - 9	131,74 kr
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1000 +	90,94 kr

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RS-artikelnummer:: 284-726
Tillv. art.nr:: IMT65R057M1HXUMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolSiC MOSFET 650 V G1
	Package Type	PG-HSOF-8
	Mount Type	Surface
	Pin Count	8
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	203W
	Maximum Gate Source Voltage Vgs	23 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Series CoolSiC MOSFET 650 V G1
	Package Type PG-HSOF-8
	Mount Type Surface
	Pin Count 8
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 203W
	Maximum Gate Source Voltage Vgs 23 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMT65R057M1HXUMA1

The Infineon CoolSiC MOSFET 650 V G1 showcases Advanced silicon carbide technology, meticulously designed for high performance and reliability in demanding applications. Capitalising on over two decades of optimisation, this MOSFET delivers exceptional efficiency and ease of use, making it an Ideal choice for various implementations, including solar inverters and electric vehicle charging systems. Its robust features ensure reliable operation in high temperature environments, paving the way for more Compact and efficient power designs. Enhanced with a fast body diode and superior gate oxide reliability, this product stands out in its category, offering a unique balance of performance and user friendliness. Perfect for engineers striving for excellence within power supply circuits, this MOSFET embodies innovation and reliability, setting a new Benchmark in the industry.

Optimised for high current switching

Enhanced avalanche capability for robustness

Compatible with standard drivers for flexibility

Kelvin source configuration reduces switching losses

High performance and reliability combined

Ideal for continuous hard commutation

Compact design enhances power density

Qualified for industrial applications per JEDEC standards

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

GRATIS leverans för online beställningar över 500,00 kr

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