Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- RS-artikelnummer:
- 284-721
- Tillv. art.nr:
- IMT65R048M1HXUMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2000 enheter)*
201 972,00 kr
(exkl. moms)
252 464,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 30 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 + | 100,986 kr | 201 972,00 kr |
*vägledande pris
- RS-artikelnummer:
- 284-721
- Tillv. art.nr:
- IMT65R048M1HXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650V G1 epitomises innovation in semiconductor technology. This high performance device leverages robust silicon carbide technology, optimising efficiency and reliability for applications requiring superior thermal performance and stability. Designed specifically for demanding environments, it excels in high temperature operations while simplifying system designs. With its Advanced features, the MOSFET ensures that users can achieve excellent power density and conserve space, making it an Ideal choice for a range of applications including electric vehicle charging infrastructure, solar inverters, and efficient power supplies. The CoolSiC MOSFET 650V G1 is more than just a component; it embodies a commitment to performance and reliability, perfect for modern electronic solutions.
Optimised for high frequency applications
Robust thermal performance for harsh environments
Enhanced reliability for extended life
Low switching losses improve efficiency
Compact design reduces system footprint
Industry leading avalanche capability for fault tolerance
User friendly integration with standard drivers
relaterade länkar
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1