ROHM RH6 1 Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin HSMT-8 RH6L040BGTB1
- RS-artikelnummer:
- 264-934
- Tillv. art.nr:
- RH6L040BGTB1
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
93,30 kr
(exkl. moms)
116,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 3 020 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 9,33 kr | 93,30 kr |
| 100 - 240 | 8,859 kr | 88,59 kr |
| 250 - 490 | 8,21 kr | 82,10 kr |
| 500 - 990 | 7,549 kr | 75,49 kr |
| 1000 + | 7,28 kr | 72,80 kr |
*vägledande pris
- RS-artikelnummer:
- 264-934
- Tillv. art.nr:
- RH6L040BGTB1
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSMT-8 | |
| Series | RH6 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 59W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Maximum Operating Temperature | 150°C | |
| Number of Elements per Chip | 1 | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSMT-8 | ||
Series RH6 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 59W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Maximum Operating Temperature 150°C | ||
Number of Elements per Chip 1 | ||
The ROHM Nch 60V 65A HSMT8 is a power MOSFET with low on resistance, suitable for switching, motor drives, DC or DC converters.
Small Surface Mount Package
Pb-free plating
RoHS compliant
relaterade länkar
- ROHM RQ3 Type N-Channel MOSFET 8-Pin HSMT-8 RQ3L060BGTB1
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BKFRATCB
- ROHM RQ3 Type P-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BJFRATCB
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1
- ROHM HP8 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1
- ROHM HT8 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 HT8KC6TB1
- ROHM HT8MC5 Type P 60 V Enhancement, 8-Pin HSMT-8 HT8MC5TB1
- ROHM RQ3L270 Type P-Channel Single MOSFETs 60 V Enhancement, 8-Pin HSMT-8AG RQ3L270BJFRATCB
