Nexperia NextPowerS3 Type N-Channel MOSFET, 300 A, 30 V Enhancement, 5-Pin LFPAK PSMN0R9-30YLDX
- RS-artikelnummer:
- 219-275
- Tillv. art.nr:
- PSMN0R9-30YLDX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
24,19 kr
(exkl. moms)
30,24 kr
(inkl. moms)
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- Dessutom levereras 1 350 enhet(er) från den 26 december 2025
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Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 24,19 kr |
| 10 - 99 | 21,95 kr |
| 100 - 499 | 20,05 kr |
| 500 - 999 | 18,70 kr |
| 1000 + | 16,80 kr |
*vägledande pris
- RS-artikelnummer:
- 219-275
- Tillv. art.nr:
- PSMN0R9-30YLDX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK | |
| Series | NextPowerS3 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.87mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 109nC | |
| Maximum Power Dissipation Pd | 291W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK | ||
Series NextPowerS3 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.87mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 109nC | ||
Maximum Power Dissipation Pd 291W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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