Nexperia NextPowerS3 Type N-Channel MOSFET, 230 A, 25 V Enhancement, 5-Pin LFPAK PSMN1R2-25YLDX
- RS-artikelnummer:
- 219-423
- Tillv. art.nr:
- PSMN1R2-25YLDX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
13,66 kr
(exkl. moms)
17,08 kr
(inkl. moms)
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- Dessutom levereras 1 500 enhet(er) från den 19 januari 2026
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Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 13,66 kr |
| 10 - 99 | 12,32 kr |
| 100 - 499 | 11,31 kr |
| 500 - 999 | 10,53 kr |
| 1000 + | 9,41 kr |
*vägledande pris
- RS-artikelnummer:
- 219-423
- Tillv. art.nr:
- PSMN1R2-25YLDX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | NextPowerS3 | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 172W | |
| Typical Gate Charge Qg @ Vgs | 34.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series NextPowerS3 | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 172W | ||
Typical Gate Charge Qg @ Vgs 34.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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