Nexperia NextPowerS3 Technology Type N-Channel MOSFET, 100 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R4-30YLDX

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18,26 kr

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22,82 kr

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  • Dessutom levereras 1 500 enhet(er) från den 26 december 2025
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1 - 918,26 kr
10 - 9916,58 kr
100 - 49915,23 kr
500 - 99914,22 kr
1000 +12,54 kr

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Förpackningsalternativ:
RS-artikelnummer:
219-402
Tillv. art.nr:
PSMN1R4-30YLDX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK

Series

NextPowerS3 Technology

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.42mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

166W

Typical Gate Charge Qg @ Vgs

27.6nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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