Nexperia NextPowerS3 Type N-Channel MOSFET, 150 A, 25 V Enhancement, 5-Pin LFPAK PSMN1R5-25MLHX

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17 157,00 kr

(exkl. moms)

21 447,00 kr

(inkl. moms)

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1500 +11,438 kr17 157,00 kr

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RS-artikelnummer:
219-264
Tillv. art.nr:
PSMN1R5-25MLHX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

25V

Package Type

LFPAK

Series

NextPowerS3

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.81mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

106W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET featuring NextPowerS3 technology offers low RDS, low IDSS leakage, and high efficiency, with a current rating of 150 A. Its optimized low gate resistance supports fast-switching applications. Key applications include synchronous buck regulators, synchronous rectifiers in AC to DC and DC to DC conversions, BLDC motor control, eFuse and battery protection, as well as OR-ing and hot-swap functionalities.

Fast switching

Low spiking and ringing for low EMI designs

High reliability copper clip bonded

Qualified to 175 °C

Exposed leads for optimal Visual solder inspection

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