Nexperia PSM Type N-Channel MOSFET, 300 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLDX
- RS-artikelnummer:
- 219-315
- Tillv. art.nr:
- PSMN1R0-30YLDX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
20,61 kr
(exkl. moms)
25,76 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 1 500 enhet(er) levereras från den 15 juli 2026
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Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 20,61 kr |
| 10 - 99 | 18,59 kr |
| 100 - 499 | 17,02 kr |
| 500 - 999 | 15,68 kr |
| 1000 + | 14,22 kr |
*vägledande pris
- RS-artikelnummer:
- 219-315
- Tillv. art.nr:
- PSMN1R0-30YLDX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 238W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 57.3nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 238W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 57.3nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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