STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 6 A, 1200 V Enhancement, 3-Pin TO-247 STW8N120K5

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RS-artikelnummer:
151-922
Tillv. art.nr:
STW8N120K5
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

1200V

Series

MDmesh K5

Package Type

TO-247

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

13.7nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

130W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

Zener protected

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