STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 enhet)*

100,02 kr

(exkl. moms)

125,02 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 990 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 - 9100,02 kr
10 - 9990,05 kr
100 - 49982,88 kr
500 +77,06 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
151-914
Tillv. art.nr:
STH13N120K5-2AG
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

1200V

Series

MDmesh K5

Package Type

H2PAK-2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.69Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

44.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

15.8mm

Height

4.7mm

Width

10.4 mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

AEC Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

Zener protected

relaterade länkar