Infineon Typ N Kanal, MOSFET, 37.9 A 650 V Förbättring, 4 Ben, TO-220, CoolMOS P6

RS-artikelnummer:: 130-0924
Tillv. art.nr:: IPP60R099P6XKSA1
Tillverkare / varumärke:: Infineon

Infineon Typ N Kanal, MOSFET, 37.9 A 650 V Förbättring, 4 Ben, TO-220, CoolMOS P6

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RS-artikelnummer:: 130-0924
Tillv. art.nr:: IPP60R099P6XKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Varumärke	Infineon
	Kanaltyp	Typ N
	Produkttyp	MOSFET
	Maximal kontinuerlig dräneringsström Id	37.9A
	Maximal källspänning för dränering Vds	650V
	Serie	CoolMOS P6
	Kapseltyp	TO-220
	Typ av fäste	Genomgående hål
	Antal ben	4
	Maximal drain-källresistans Rds	99mΩ
	Kanalläge	Förbättring
	Maximal effektförlust Pd	278W
	Minsta arbetsstemperatur	-55°C
	Typisk grindladdning Qg @ Vgs	70nC
	Framåtriktad spänning Vf	0.9V
	Maximal arbetstemperatur	150°C
	Längd	10.36mm
	Standarder/godkännanden	No
	Höjd	15.95mm
	Fordonsstandard	Nej

	Välj alla
	Varumärke Infineon
	Kanaltyp Typ N
	Produkttyp MOSFET
	Maximal kontinuerlig dräneringsström Id 37.9A
	Maximal källspänning för dränering Vds 650V
	Serie CoolMOS P6
	Kapseltyp TO-220
	Typ av fäste Genomgående hål
	Antal ben 4
	Maximal drain-källresistans Rds 99mΩ
	Kanalläge Förbättring
	Maximal effektförlust Pd 278W
	Minsta arbetsstemperatur -55°C
	Typisk grindladdning Qg @ Vgs 70nC
	Framåtriktad spänning Vf 0.9V
	Maximal arbetstemperatur 150°C
	Längd 10.36mm
	Standarder/godkännanden No
	Höjd 15.95mm
	Fordonsstandard Nej

Infineon CoolMOS™ P6 Series MOSFET, 37.9A Maximum Continuous Drain Current, 278W Maximum Power Dissipation - IPP60R099P6XKSA1

This MOSFET is tailored for high-performance applications in need of efficient power management. With a maximum continuous drain current of 37.9A and a drain-source voltage rating of 650V, it excels in automation and electronic sectors. Its enhancement mode N-channel configuration allows for effective switching capabilities, making it a preferred option for professionals in the electrical and mechanical industries.

Features & Benefits

• Low RDS(on) of 99mΩ improves switching efficiency

• Can dissipate up to 278W for enhanced durability

• Functions well under high temperatures of up to +150°C

• ESD protection above 2kV ensures dependable operation

• Suitable for both hard and soft switching applications

• Packaged in TO-220 for flexible mounting options

Applications

• Used in PFC stages for efficient power conversion

• Applicable in hard-switching PWM stages to boost performance

• Ideal for resonant switching stages in various electronic products

• Utilised in adapters and power supplies for electronic devices

• Effective in industrial automation systems demanding high power

What is the suitable gate-source voltage range for operation?

The appropriate gate-source voltage range for operation is -30V to +30V, ensuring safe and effective switching.

How does the low RDS(on) value benefit power efficiency?

The low resistance enhances power efficiency by reducing conduction losses, leading to decreased heat generation during operation.

What is the maximum power dissipation capability during usage?

The maximum power dissipation capacity during operation is 278W, allowing robust performance under challenging conditions.

Is there any special consideration for using this component in parallel configurations?

When using in parallel, it is advisable to use ferrite beads on the gate or separate totem poles to optimise performance and minimise oscillations.

What thermal management practices should be implemented?

Effective thermal management practices include proper heat sinking and monitoring temperature during operation to maintain performance within specified limits.