Semikron SKM300GB126D, SEMITRANS3 , N-Channel Dual Half Bridge IGBT Module, 310 A max, 1200 V, Panel Mount

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RS-artikelnummer:
468-2505
Tillv. art.nr:
SKM300GB126D
Tillverkare / varumärke:
Semikron
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Brand

Semikron

Maximum Continuous Collector Current

310 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS3

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
DE

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology


IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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