Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS-artikelnummer:
- 258-3757
- Tillv. art.nr:
- IMBG120R350M1HXTMA1
- Tillverkare / varumärke:
- Infineon
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Antal (1 enhet)*
53,76 kr
(exkl. moms)
67,20 kr
(inkl. moms)
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- Dessutom levereras 654 enhet(er) från den 30 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 53,76 kr |
| 10 - 24 | 47,71 kr |
| 25 - 49 | 45,14 kr |
| 50 - 99 | 42,00 kr |
| 100 + | 38,75 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3757
- Tillv. art.nr:
- IMBG120R350M1HXTMA1
- Tillverkare / varumärke:
- Infineon
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Välj alla | Attribut | Värde |
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| Brand | Infineon | |
| Package Type | PG-TO263-7 | |
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Brand Infineon | ||
Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
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