Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- RS-artikelnummer:
- 259-1526
- Tillv. art.nr:
- IGW50N65F5FKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
745,11 kr
(exkl. moms)
931,38 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 180 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 24,837 kr | 745,11 kr |
| 60 - 120 | 23,598 kr | 707,94 kr |
| 150 + | 22,60 kr | 678,00 kr |
*vägledande pris
- RS-artikelnummer:
- 259-1526
- Tillv. art.nr:
- IGW50N65F5FKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 305 W | |
| Package Type | PG-TO247-3 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type PG-TO247-3 | ||
The Infineon new TRENCHSTOPIGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50V increase in the bus voltage possible without compromising reliability.
650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stabilit
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stabilit
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