STMicroelectronics STGW75H65DFB2-4 IGBT, 115 A 650 V, 4-Pin TO-247

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1 900,74 kr

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2 375,94 kr

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  • Dessutom levereras 60 enhet(er) från den 19 januari 2026
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30 - 3063,358 kr1 900,74 kr
60 +60,189 kr1 805,67 kr

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RS-artikelnummer:
206-6063
Tillv. art.nr:
STGW75H65DFB2-4
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

115 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

357 W

Number of Transistors

1

Package Type

TO-247

Pin Count

4

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Excellent switching performance thanks to the extra driving kelvin pin

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