Infineon, IGBT, Typ N Kanal, 4 A 600 V, TO-251

This IGBT is a highly efficient transistor designed for use in demanding applications. With a maximum collector-emitter voltage of 600V and a continuous collector current rating of 4A, this TO-251 IGBT module excels in performance. The compact dimensions of 6.6 x 6.1 x 0.09 mm make it suitable for a variety of setups while operating effectively within a temperature range from -40°C to +175°C.

• Very low saturation voltage enhances energy efficiency

• Utilised in frequency inverters for efficient energy conversion

This device features a maximum collector-emitter voltage of 600V and a continuous collector current of 4A, making it suitable for high power applications. Its maximum power dissipation is rated at 42W, allowing it to handle substantial load demands effectively.

The gate-emitter voltage range of ±20V provides flexibility in driving configurations, allowing integration with a variety of control circuits while maintaining stable operation in diverse conditions.

With a thermal resistance of 3.5 K/W between junction and case, this IGBT ensures efficient heat management, allowing prolonged operation at high temperatures without performance degradation, which is essential for high-power applications.

The device operates between -40°C and +175°C, ensuring reliability in extreme temperatures, which is crucial for industrial applications exposed to varying environmental conditions.