Infineon, Gate Driver 2, 290 mA 8-Pin 20 V, DSO-8
- RS-artikelnummer:
- 258-0605
- Tillv. art.nr:
- 2ED21091S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
14 562,50 kr
(exkl. moms)
18 202,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 28 september 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 5,825 kr | 14 562,50 kr |
*vägledande pris
- RS-artikelnummer:
- 258-0605
- Tillv. art.nr:
- 2ED21091S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Package Type | DSO-8 | |
| Fall Time | 35ns | |
| Driver Type | Gate Driver | |
| Rise Time | 100ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED21091S6F | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Package Type DSO-8 | ||
Fall Time 35ns | ||
Driver Type Gate Driver | ||
Rise Time 100ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED21091S6F | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
The dual function DT/SD input turns off both channels
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