Infineon MOSFET Gate Driver 2, 290 mA 8-Pin 25 V, DSO

Se alla Gate Drivers

Antal (1 rulle med 2500 enheter)*

15 642,50 kr

(exkl. moms)

19 552,50 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 18 november 2027
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
2500 +6,257 kr15 642,50 kr

*vägledande pris

RS-artikelnummer:
226-6021
Tillv. art.nr:
2ED2109S06FXUMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

High Speed Power MOSFET & IGBT Driver

Output Current

290mA

Pin Count

8

Fall Time

80ns

Package Type

DSO

Number of Outputs

2

Driver Type

MOSFET

Rise Time

150ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

25V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

JEDEC47/20/22

Width

3.9 mm

Length

4.9mm

Series

2ED2109 (4) S06F (J)

Height

1.72mm

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

relaterade länkar