Infineon 2ED2103S06FXUMA1 Gate Driver 2, 290 mA 8-Pin 20 V, DSO
- RS-artikelnummer:
- 236-3633
- Tillv. art.nr:
- 2ED2103S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
102,79 kr
(exkl. moms)
128,49 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 850 enhet(er) från den 22 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 10,279 kr | 102,79 kr |
| 100 - 240 | 9,766 kr | 97,66 kr |
| 250 - 490 | 9,352 kr | 93,52 kr |
| 500 - 990 | 8,938 kr | 89,38 kr |
| 1000 + | 8,333 kr | 83,33 kr |
*vägledande pris
- RS-artikelnummer:
- 236-3633
- Tillv. art.nr:
- 2ED2103S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Package Type | DSO | |
| Fall Time | 35ns | |
| Number of Outputs | 2 | |
| Driver Type | General Purpose | |
| Rise Time | 170ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED | |
| Standards/Approvals | RoHS | |
| Mount Type | Board | |
| Automotive Standard | AEC-Q100 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type General Purpose Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Package Type DSO | ||
Fall Time 35ns | ||
Number of Outputs 2 | ||
Driver Type General Purpose | ||
Rise Time 170ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED | ||
Standards/Approvals RoHS | ||
Mount Type Board | ||
Automotive Standard AEC-Q100 | ||
The Infineon high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It provides excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages. With no parasitic Thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
50% lower level-shift losses
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