Infineon 2ED2104S06FXUMA1 Gate Driver 2, 290 mA 8-Pin 25 V, DSO
- RS-artikelnummer:
- 236-3635
- Tillv. art.nr:
- 2ED2104S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
11 887,50 kr
(exkl. moms)
14 860,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 juli 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 4,755 kr | 11 887,50 kr |
*vägledande pris
- RS-artikelnummer:
- 236-3635
- Tillv. art.nr:
- 2ED2104S06FXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | DSO | |
| Number of Outputs | 2 | |
| Driver Type | General Purpose | |
| Rise Time | 170ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 25V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.9mm | |
| Height | 1.72mm | |
| Series | 2ED2104S06F | |
| Width | 3.9 mm | |
| Standards/Approvals | RoHS | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type General Purpose Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type DSO | ||
Number of Outputs 2 | ||
Driver Type General Purpose | ||
Rise Time 170ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 25V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 4.9mm | ||
Height 1.72mm | ||
Series 2ED2104S06F | ||
Width 3.9 mm | ||
Standards/Approvals RoHS | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It provides excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages. With no parasitic Thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
50% lower level-shift losses
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