Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247

Se kategorien
Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

2 205,51 kr

(exkl. moms)

2 756,88 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • 60 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
30 - 3073,517 kr2 205,51 kr
60 - 6069,843 kr2 095,29 kr
90 +65,43 kr1 962,90 kr

*vägledande pris

RS-artikelnummer:
222-4843
Tillv. art.nr:
IDWD30G120C5XKSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Mount Type

Surface

Product Type

SiC Diode

Package Type

TO-247

Maximum Continuous Forward Current If

30A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

5th Generation CoolSiC 1200V Schottky Diode

Rectifier Type

Schottky

Pin Count

2

Peak Non-Repetitive Forward Surge Current Ifsm

240A

Maximum Forward Voltage Vf

1.65V

Minimum Operating Temperature

-55°C

Peak Reverse Current Ir

248μA

Maximum Operating Temperature

175°C

Width

15.8 mm

Length

40.21mm

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

Relaterade länkar