Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- RS-artikelnummer:
- 222-4834
- Tillv. art.nr:
- IDW10G120C5BFKSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 2 enheter)*
106,96 kr
(exkl. moms)
133,70 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 + | 53,48 kr | 106,96 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4834
- Tillv. art.nr:
- IDW10G120C5BFKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiCTM | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Maximum Forward Voltage Vf | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiCTM | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Maximum Forward Voltage Vf 2.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
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