Infineon 1200V 8A, SiC Schottky Diode, 3-Pin TO-247 IDM08G120C5XTMA1

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance